SCATTERING ON SHORT-RANGE POTENTIALS IN SEMICONDUCTORS WITH A NARROW ENERGY GAP.LITWIN STASZEWSKA E; SZYMANSKA W.1976; PHYS. STATUS SOLIDI, B; ALLEM.; DA. 1976; VOL. 74; NO 2; PP. K89-K92; BIBL. 6 REF.Article

THE ELECTRON MOBILITY AND THERMOELECTRIC POWER IN INSB AT ATMOSPHERIC AND HYDROSTATIC PRESSURESLITWIN STASZEWSKA E; SZYMANSKA W; PIOTRZKOWSKI R et al.1981; PHYS. STATUS SOLIDI (B), BASIC RES.; ISSN 0370-1972; DDR; DA. 1981; VOL. 106; NO 2; PP. 551-559; ABS. RUS; BIBL. 31 REF.Article

ON THE DEEP IMPURITY LEVEL IN N-INSBLITWIN STASZEWSKA E; KONCZEWICZ L; PIOTRZKOWSKI R et al.1982; PHYSICA STATUS SOLIDI. (B). BASIC RESEARCH; ISSN 0370-1972; DDR; DA. 1982; VOL. 114; NO 2; PP. K153-K156; BIBL. 4 REF.Article

The variation of the pressure coefficient of manganin sensors at low temperaturesDMOWSKI, L. H; LITWIN-STASZEWSKA, E.Measurement science & technology (Print). 1999, Vol 10, Num 5, pp 343-347, issn 0957-0233Article

Pressure dependence of resistivity and magnetoresistivity in InSb below 1 KSUSKI, T; LITWIN-STASZEWSKA, E; PLESIEWICZ, W et al.Solid state communications. 1986, Vol 57, Num 8, pp 575-578, issn 0038-1098Article

Parameters of multilevel structure of the DX centre in GaAlAs from pressure studies of the Hall effectPIOTRZKOWSKI, R; LITWIN-STASZEWSKA, E; LORENZINI, P et al.Semiconductor science and technology. 1992, Vol 7, Num 1, pp 103-108, issn 0268-1242Article

Metastable resonant localized electron state in GaAs doped with Ga₂O₃DMOWSKI, L; KONCZEWICZ, L; LITWIN-STASZEWSKA, E et al.Acta physica Polonica. A. 1988, Vol 73, Num 2, pp 223-226, issn 0587-4246Article

The effect of pressure on the luminescence from GaAs/AlGaAs quantum wellsPERLIN, P; TRZECIAKOWSKI, W; LITWIN-STASZEWSKA, E et al.Semiconductor science and technology. 1994, Vol 9, Num 12, pp 2239-2246, issn 0268-1242Article

Multicomponent structure of electron emission from the Te-related DX center in AlGaAsPIOTRZKOWSKI, R; LITWIN-STASZEWSKA, E; SUSKI, T et al.Journal of applied physics. 1993, Vol 73, Num 5, pp 2572-2574, issn 0021-8979Article

The influence of hydrostatic pressure on the formation of a donor superlattice in HgSe:FeSKIERBISZEWSKI, C; SUSKI, T; LITWIN-STASZEWSKA, E et al.Semiconductor science and technology. 1989, Vol 4, Num 4, pp 293-295, issn 0268-1242, 3 p.Conference Paper

Parallel conduction in p-type gallium nitride homo-structuresLITWIN-STASZEWSKA, E; KONCZEWICZ, L; PIOTRZKOWSKI, R et al.Semiconductor science and technology. 2008, Vol 23, Num 9, issn 0268-1242, 095007.1-095007.5Article

Concentration dependent mobility of two-dimensional electron gas in GaAs/AlGaAs heterostructureGORCZYCA, I; SKIERBISZEWSKI, C; LITWIN-STASZEWSKA, E et al.Semiconductor science and technology. 1991, Vol 6, Num 6, pp 461-464, issn 0268-1242, 4 p.Article

Pressure assisted studies of thermal emission from resonant DX centres : new evidence for multi-level structure of Si-DX centre in GaAlAsPIOTRZKOWSKI, R; LITWIN-STASZEWSKA, E; ROBERT, J. L et al.Semiconductor science and technology. 1991, Vol 6, Num 6, pp 500-504, issn 0268-1242, 5 p.Article

Pressure study of metastability in Ga_1-xAl_xAs/GaAs:Si heterojunctionsPIOTRZKOWSKI, R; ROBERT, J. L; LITWIN-STASZEWSKA, E et al.Physical review. B, Condensed matter. 1988, Vol 37, Num 2, pp 1031-1034, issn 0163-1829Article

Dependence of mobility on DX-centre configuration in GaAlAs alloyPIOTRZKOWSKI, R; KONCZEWICZ, L; LITWIN-STASZEWSKA, E et al.Semiconductor science and technology. 1991, Vol 6, Num 4, pp 250-253, issn 0268-1242, 4 p.Article

Study of dopant activation in bulk GaN: MgPIOTRZKOWSKI, R; LITWIN-STASZEWSKA, E; SUSKI, T et al.Physica. B, Condensed matter. 2001, Vol 308-10, pp 47-50, issn 0921-4526Conference Paper

Polarity identification of GaN bulk single crystals (0001) surface by Auger electron spectroscopyILLER, A; MARKS, J; GRZEGORY, I et al.Crystal research and technology (1979). 1997, Vol 32, Num 2, pp 229-233, issn 0232-1300Article

Deformation potential in a high-electron-mobility GaAs/Ga_0.7Al_0.3As heterostructure : hydrostatic-pressure studiesGORCZYCA, I; SUSKI, T; LITWIN-STASZEWSKA, E et al.Physical review. B, Condensed matter. 1992, Vol 46, Num 7, pp 4328-4331, issn 0163-1829Article

High pressure and DX centers in heavily doped bulk GaAsSUSKI, T; PIOTRZKOWSKI, R; WISNIEWSKI, P et al.Physical review. B, Condensed matter. 1989, Vol 40, Num 6, pp 4012-4021, issn 0163-1829, 10 p.Article

Model of the metastable center in indium antimonide: comment on pressure-dependent compensation in InSbPIOTRZKOWSKI, R; DMOWSKI, L; BAJ, M et al.Physical review. B, Condensed matter. 1985, Vol 32, Num 4, pp 2649-2652, issn 0163-1829Article

Inter-donor interactions ― Source of electron mobility increase under pressureDIETL, T; DMOWSKI, L; KOSSUT, J et al.Acta physica Polonica. A. 1990, Vol 77, Num 1, pp 29-31, issn 0587-4246Article

High nitrogen pressure solution growth of bulk GaN in feed-seed configurationBOCKOWSKI, M; GRZEGORY, I; LUCZNIK, B et al.Physica status solidi. A, Applications and materials science (Print). 2011, Vol 208, Num 7, pp 1507-1510, issn 1862-6300, 4 p.Article

Mobility and quantum lifetime in a GaAs/AlGaAs heterostructure : tuning of the remote-charge correlationsWISNIEWSKI, P; SUSKI, T; LITWIN-STASZEWSKA, E et al.Surface science. 1996, Vol 361-62, Num 1-3, pp 579-582, issn 0039-6028Conference Paper

Deposition of thick GaN layers by HVPE on the pressure grown GaN substratesLUCZNIK, B; PASTUSZKA, B; GRZEGORY, I et al.Journal of crystal growth. 2005, Vol 281, Num 1, pp 38-46, issn 0022-0248, 9 p.Conference Paper

The effect of Γ-X mixing on the direct excitonic photoluminescence in GaAs/AlGaAs quantum wellsPERLIN, P; SOSIN, T. P; TRZECIAKOWSKI, W et al.The Journal of physics and chemistry of solids. 1995, Vol 56, Num 3-4, pp 411-414, issn 0022-3697Conference Paper